Study of the growth process and optoelectrical properties of nanocrystalline Cu₃BiS₃ thin films

Keyphrases

• Above Room Temperature 25%
• Absorbent Layer 25%
• Activation Energy 25%
• Atomic Force Microscopy 50%
• Carrier Transport 25%
• Conductivity Type 25%
• Cu3BiS3 100%
• Effusion Cell 25%
• Electric Conductivity 25%
• Electrical Measurements 50%
• Electrical Properties 25%
• Elemental Sulfur 25%
• Energy Band Gap 25%
• Glass Substrate 25%
• Grain Size 25%
• Growth Conditions 25%
• Growth Process 100%
• High Absorption Coefficient 25%
• High Temperature Range 25%
• Mass Ratio 25%
• Metallic Precursor 25%
• Morphological Properties 25%
• Nanocrystalline 100%
• Optical Properties 25%
• Optoelectronic Properties 100%
• P-type 25%
• Processing Properties 100%
• Scanning Electron Microscopy 25%
• Soda-lime Glass 25%
• Spectral Transmittance 25%
• Step Processes 25%
• Tantalum 25%
• Thermally Activated Processes 25%
• Thin Film Solar Cells 25%
• Tungsten 25%
• X-ray Photoelectron Spectroscopy 25%

Engineering

• Absorption Coefficient 33%
• Absorptivity 33%
• Activation Energy 33%
• Atomic Force Microscopy 66%
• Band Gap Energy 33%
• Electrical Conductivity 33%
• Electrical Measurement 66%
• Elemental Sulfur 33%
• Film Solar Cell 33%
• Glass Substrate 33%
• Growth Condition 33%
• Growth Process 100%
• Lime Glass 33%
• Mass Ratio 33%
• Nanocrystalline 100%
• Ray Photoelectron Spectroscopy 33%
• Room Temperature 33%
• Step Process 33%
• Temperature Range 33%
• Thin Films 100%

Material Science

• Activation Energy 33%
• Atomic Force Microscopy 66%
• Carrier Transport 33%
• Electrical Conductivity 33%
• Film 66%
• Grain Size 33%
• Morphology 33%
• Nanocrystalline 100%
• Scanning Electron Microscopy 33%
• Solar Cell 33%
• Tantalum 33%
• Thin Films 100%
• Tungsten 33%
• X-Ray Photoelectron Spectroscopy 33%