Study of the growth process and optoelectrical properties of nanocrystalline Cu₃BiS₃ thin films

Keyphrases

• Growth Process 100%
• Cu3BiS3 100%
• Nanocrystalline 100%
• Optoelectronic Properties 100%
• Processing Properties 100%
• Atomic Force Microscopy 50%
• Electrical Measurements 50%
• Optical Properties 25%
• Morphological Properties 25%
• Electrical Properties 25%
• Absorbent Layer 25%
• Mass Ratio 25%
• Metallic Precursor 25%
• Energy Band Gap 25%
• Spectral Transmittance 25%
• Activation Energy 25%
• Grain Size 25%
• Thin Film Solar Cells 25%
• High Absorption Coefficient 25%
• Tantalum 25%
• Electric Conductivity 25%
• High Temperature Range 25%
• X-ray Photoelectron Spectroscopy 25%
• Step Processes 25%
• Thermally Activated Processes 25%
• Carrier Transport 25%
• Growth Conditions 25%
• Above Room Temperature 25%
• Elemental Sulfur 25%
• Scanning Electron Microscopy (SEM-EDS) 25%
• Soda-lime Glass Substrate 25%
• Type Conductivity 25%
• Effusion Cells 25%

Material Science

• Thin Films 100%
• Nanocrystalline 100%
• Film 66%
• Atomic Force Microscopy 66%
• Morphology 33%
• Scanning Electron Microscopy 33%
• Solar Cell 33%
• Electrical Conductivity 33%
• Activation Energy 33%
• Grain Size 33%
• Carrier Transport 33%
• X-Ray Photoelectron Spectroscopy 33%
• Tungsten 33%
• Tantalum 33%
• Electrical Property 33%
• Glass Substrate 33%