Resumen
This work reports results concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu 2Se and SnSe2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu2ZnSnSe4 films was analyzed. The electrical behavior of the compound was studied.
Idioma original | Inglés estadounidense |
---|---|
Páginas (desde-hasta) | 902-904 |
Número de páginas | 3 |
Publicación | Canadian Journal of Physics |
Volumen | 92 |
N.º | 7-8 |
DOI | |
Estado | Publicada - jul. 2014 |
Áreas temáticas de ASJC Scopus
- Física y Astronomía General