Growth and structural characterization of Cu2ZnSnSe4 compound for solar cells1

N. Seña; F. Mesa; A. Dussan; G. Gordillo

doi:10.1139/cjp-2013-0602

Growth and structural characterization of Cu₂ZnSnSe₄ compound for solar cells¹

N. Seña, F. Mesa, A. Dussan, G. Gordillo

Universidad del Rosario

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

1 Cita (Scopus)

Resumen

This work reports results concerning the effect of the deposition parameters on the structural properties of Cu₂ZnSnSe₄ thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu ₂Se and SnSe₂ phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu₂ZnSnSe₄ films was analyzed. The electrical behavior of the compound was studied.

Idioma original	Inglés estadounidense
Páginas (desde-hasta)	902-904
Número de páginas	3
Publicación	Canadian Journal of Physics
Volumen	92
N.º	7-8
DOI	https://doi.org/10.1139/cjp-2013-0602
Estado	Publicada - jul. 2014

Áreas temáticas de ASJC Scopus

Física y Astronomía General

ODS de las Naciones Unidas

Este resultado contribuye a los siguientes Objetivos de Desarrollo Sostenible

Acceder al documento

10.1139/cjp-2013-0602

Otros archivos y enlaces

Citar esto

@article{41dc262b7ebd40d4b4341dc068b409cc,

title = "Growth and structural characterization of Cu2ZnSnSe4 compound for solar cells1",

abstract = "This work reports results concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu 2Se and SnSe2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu2ZnSnSe4 films was analyzed. The electrical behavior of the compound was studied.",

author = "N. Se{\~n}a and F. Mesa and A. Dussan and G. Gordillo",

year = "2014",

month = jul,

doi = "10.1139/cjp-2013-0602",

language = "English (US)",

volume = "92",

pages = "902--904",

journal = "Canadian Journal of Physics",

issn = "0008-4204",

publisher = "National Research Council of Canada",

number = "7-8",

}

TY - JOUR

T1 - Growth and structural characterization of Cu2ZnSnSe4 compound for solar cells1

AU - Seña, N.

AU - Mesa, F.

AU - Dussan, A.

AU - Gordillo, G.

PY - 2014/7

Y1 - 2014/7

N2 - This work reports results concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu 2Se and SnSe2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu2ZnSnSe4 films was analyzed. The electrical behavior of the compound was studied.

AB - This work reports results concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu 2Se and SnSe2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu2ZnSnSe4 films was analyzed. The electrical behavior of the compound was studied.

UR - http://www.scopus.com/inward/record.url?scp=84904308511&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904308511&partnerID=8YFLogxK

U2 - 10.1139/cjp-2013-0602

DO - 10.1139/cjp-2013-0602

M3 - Article

AN - SCOPUS:84904308511

SN - 0008-4204

VL - 92

SP - 902

EP - 904

JO - Canadian Journal of Physics

JF - Canadian Journal of Physics

IS - 7-8

ER -