Growth and structural characterization of Cu2ZnSnSe4 compound for solar cells1

N. Seña; F. Mesa; A. Dussan; G. Gordillo

doi:10.1139/cjp-2013-0602

Growth and structural characterization of Cu₂ZnSnSe₄ compound for solar cells¹

N. Seña, F. Mesa, A. Dussan, G. Gordillo

urosario

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This work reports results concerning the effect of the deposition parameters on the structural properties of Cu₂ZnSnSe₄ thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu ₂Se and SnSe₂ phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu₂ZnSnSe₄ films was analyzed. The electrical behavior of the compound was studied.

Original language	English (US)
Pages (from-to)	902-904
Number of pages	3
Journal	Canadian Journal of Physics
Volume	92
Issue number	7-8
DOIs	https://doi.org/10.1139/cjp-2013-0602
State	Published - Jul 2014

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1139/cjp-2013-0602

Cite this

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abstract = "This work reports results concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu 2Se and SnSe2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu2ZnSnSe4 films was analyzed. The electrical behavior of the compound was studied.",

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AU - Seña, N.

AU - Mesa, F.

AU - Dussan, A.

AU - Gordillo, G.

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AB - This work reports results concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu 2Se and SnSe2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu2ZnSnSe4 films was analyzed. The electrical behavior of the compound was studied.

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