Effect of the deposition conditions on the optical, morphological and compositional properties of CuIn1-xGaxSe2 thin films prepared by a multistage process

C. Calderón, G. Gordillo, P. Bartolo-Pérez, F. Mesa

Resultado de la investigación: Contribución a una revistaArtículorevisión exhaustiva

2 Citas (Scopus)

Resumen

This work presents results related with optical, morphological and compositional properties of polycrystalline p-type CuIn1-xGa xSe2 (CIGS) thin films. The films were grown by a chemical reaction of the precursor species which are sequentially evaporated in two and three stage processes on a soda-lime glass substrate, and later will be used as an absorber layer in solar cells. The samples were characterized optically, morphologically, and compositionally through transmittance, Atomic Force Microscopy (AFM), and X-ray Photoelectron Spectroscopy (XPS) measurements. The results showed that, in general, the deposited samples grow with absorption coefficients and optical gaps that are adequate for absorber layers in solar cells. In general, the films deposited in a two stage process present a mixture of the Cu(In,Ga)Se2 phase in the bulk with the secondary In 2Se3 and Cu2Se phases at the surface, while the films grown in a three stage process mainly present the Cu(In,Ga)Se2 phase.

Idioma originalInglés estadounidense
Páginas (desde-hasta)270-273
Número de páginas4
PublicaciónRevista Mexicana de Fisica
Volumen53
N.º7
EstadoPublicada - dic. 2007
Publicado de forma externa

Áreas temáticas de ASJC Scopus

  • Física y astronomía (todo)

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