TY - JOUR
T1 - Effect of the deposition conditions on the optical, morphological and compositional properties of CuIn1-xGaxSe2 thin films prepared by a multistage process
AU - Calderón, C.
AU - Gordillo, G.
AU - Bartolo-Pérez, P.
AU - Mesa, F.
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2007/12
Y1 - 2007/12
N2 - This work presents results related with optical, morphological and compositional properties of polycrystalline p-type CuIn1-xGa xSe2 (CIGS) thin films. The films were grown by a chemical reaction of the precursor species which are sequentially evaporated in two and three stage processes on a soda-lime glass substrate, and later will be used as an absorber layer in solar cells. The samples were characterized optically, morphologically, and compositionally through transmittance, Atomic Force Microscopy (AFM), and X-ray Photoelectron Spectroscopy (XPS) measurements. The results showed that, in general, the deposited samples grow with absorption coefficients and optical gaps that are adequate for absorber layers in solar cells. In general, the films deposited in a two stage process present a mixture of the Cu(In,Ga)Se2 phase in the bulk with the secondary In 2Se3 and Cu2Se phases at the surface, while the films grown in a three stage process mainly present the Cu(In,Ga)Se2 phase.
AB - This work presents results related with optical, morphological and compositional properties of polycrystalline p-type CuIn1-xGa xSe2 (CIGS) thin films. The films were grown by a chemical reaction of the precursor species which are sequentially evaporated in two and three stage processes on a soda-lime glass substrate, and later will be used as an absorber layer in solar cells. The samples were characterized optically, morphologically, and compositionally through transmittance, Atomic Force Microscopy (AFM), and X-ray Photoelectron Spectroscopy (XPS) measurements. The results showed that, in general, the deposited samples grow with absorption coefficients and optical gaps that are adequate for absorber layers in solar cells. In general, the films deposited in a two stage process present a mixture of the Cu(In,Ga)Se2 phase in the bulk with the secondary In 2Se3 and Cu2Se phases at the surface, while the films grown in a three stage process mainly present the Cu(In,Ga)Se2 phase.
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M3 - Research Article
AN - SCOPUS:41149139701
SN - 0035-001X
VL - 53
SP - 270
EP - 273
JO - Revista Mexicana de Fisica
JF - Revista Mexicana de Fisica
IS - 7
ER -