TY - JOUR
T1 - Raman Spectroscopy of Few-Layers TaS2 and Mo-Doped TaS2 with Enhanced Superconductivity
AU - Valencia-Ibáñez, Santiago
AU - Jiménez-Guerrero, Diana
AU - Salcedo-Pimienta, Jose D.
AU - Vega-Bustos, Karen
AU - Cárdenas-Chirivi, Gabriel
AU - López-Manrique, Laura
AU - Herrera-Vasco, Edwin
AU - Galvis, Jose A.
AU - Hernández, Yenny
AU - Giraldo-Gallo, Paula
N1 - Funding Information:
S.V.‐I. and D.J.‐G. contributed equally to this work. The authors thank Ian R. Fisher and Joshua Straquadine for support during the sample growth process, and insightful discussions. S.V‐I., D.J‐G., J.D.S‐P., J.A.G., and P.G‐G. thank the support of the Ministerio de Ciencia, Tecnología e Innovación de Colombia (Grants No. 120480863414 and 122585271058). J.D.S‐P., L.L‐M, P.G‐G., and Y.H. thank the support of the School of Sciences of Universidad de Los Andes. P.G‐G. thanks the support of the FAPA grant from vicepresidency for research and creation, Universidad de Los Andes, and the L'Oréal‐UNESCO For Women in Science International Rising Talents Programme. The authors acknowledge the instruments and scientific and technical assistance of the MicroCore Microscopy Core at Universidad de Los Andes, a facility that is supported by the vicepresidency for research and creation.
Funding Information:
S.V.-I. and D.J.-G. contributed equally to this work. The authors thank Ian R. Fisher and Joshua Straquadine for support during the sample growth process, and insightful discussions. S.V-I., D.J-G., J.D.S-P., J.A.G., and P.G-G. thank the support of the Ministerio de Ciencia, Tecnología e Innovación de Colombia (Grants No. 120480863414 and 122585271058). J.D.S-P., L.L-M, P.G-G., and Y.H. thank the support of the School of Sciences of Universidad de Los Andes. P.G-G. thanks the support of the FAPA grant from vicepresidency for research and creation, Universidad de Los Andes, and the L'Oréal-UNESCO For Women in Science International Rising Talents Programme. The authors acknowledge the instruments and scientific and technical assistance of the MicroCore Microscopy Core at Universidad de Los Andes, a facility that is supported by the vicepresidency for research and creation.
Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022/10
Y1 - 2022/10
N2 - The use of simple, fast, and economic experimental tools to characterize low-dimensional materials is an important step in the process of democratizing their use. Raman spectroscopy has arisen as a way of indirectly determining the thickness of nanolayers of transition metal dichalcogenides (TMDs), avoiding the use of more expensive tools such as atomic force microscopy, and it is therefore a widely used technique in the study of semiconducting TMDs. However, the study of many metallic TMDs in the limit of few atomic layers is still behind when compared to their semiconducting counterparts, partly due to the lack of similar alternative characterization studies. In this work the characterization of the Raman spectrum, specifically of the E (Formula presented.) - and A1g-modes, of mechanically exfoliated Ta1−xMoxS2, a metallic TMD which exhibits charge density wave (CDW) formation and superconductivity, is presented. The clear identification of contributions coming from the SiO2/Si substrate allowed the isolation of the individual E (Formula presented.) - and A1g-modes of the samples and, for the first time, the observation of a clear evolution of their Raman shifts as a function of sample thickness. This provides a way of indirectly determining sample thickness in the limit of few atomic layers in Ta1−xMoxS2.
AB - The use of simple, fast, and economic experimental tools to characterize low-dimensional materials is an important step in the process of democratizing their use. Raman spectroscopy has arisen as a way of indirectly determining the thickness of nanolayers of transition metal dichalcogenides (TMDs), avoiding the use of more expensive tools such as atomic force microscopy, and it is therefore a widely used technique in the study of semiconducting TMDs. However, the study of many metallic TMDs in the limit of few atomic layers is still behind when compared to their semiconducting counterparts, partly due to the lack of similar alternative characterization studies. In this work the characterization of the Raman spectrum, specifically of the E (Formula presented.) - and A1g-modes, of mechanically exfoliated Ta1−xMoxS2, a metallic TMD which exhibits charge density wave (CDW) formation and superconductivity, is presented. The clear identification of contributions coming from the SiO2/Si substrate allowed the isolation of the individual E (Formula presented.) - and A1g-modes of the samples and, for the first time, the observation of a clear evolution of their Raman shifts as a function of sample thickness. This provides a way of indirectly determining sample thickness in the limit of few atomic layers in Ta1−xMoxS2.
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U2 - 10.1002/aelm.202200457
DO - 10.1002/aelm.202200457
M3 - Research Article
AN - SCOPUS:85134707107
SN - 2199-160X
VL - 8
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 10
M1 - 2200457
ER -