On the validity of difiusional model in determination of electric transport parameters of semiconductor compound

A. Dussana, F. Mesa

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu 2ZnSnSe4, and CuInGaSe2 thin-lms. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the difiusional model, the density of states near the Fermi level (NF), as well as the hopping parameters (W activation energy and R hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the difiusional model in semiconductor compounds.

Original languageEnglish (US)
Pages (from-to)171-173
Number of pages3
JournalActa Physica Polonica A
Volume125
Issue number2
DOIs
StatePublished - Feb 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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