TY - JOUR
T1 - Optical and structural study of In 2 S 3 thin films growth by co-evaporation and chemical bath deposition (CBD) on Cu 3 BiS 3
AU - Mesa, F.
AU - Chamorro, W.
AU - Hurtado, M.
N1 - Funding Information:
This work was supported by COLCIENCIAS , Universidad Nacional de Colombia and Colegio Mayor de Nuestra Señora del Rosario and Universidad de los Andes . We thank the Semiconducting Materials and Solar Energy Group led by Dr. Gerardo Gordillo for laboratory support in sample preparation.
Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2015/9/30
Y1 - 2015/9/30
N2 - We present the growth of In 2 S 3 onto Cu 3 BiS 3 layers and soda-lime glass (SLG) substrates by using chemical bath deposition (CBD) and physical co-evaporation. The results reveal that the microstructure and the optical properties of the In 2 S 3 films are highly dependent on the growth method. X-ray diffractrograms show that In 2 S 3 films have a higher crystallinity when growing by co-evaporation than by CBD. In 2 S 3 thin films grown by CBD with a thickness below 170 nm have an amorphous structure however when increasing the thickness the films exhibit two diffraction peaks associated to the (1 0 3) and (1 0 7) planes of the β-In 2 S 3 tetragonal structure. It was also found that the In 2 S 3 films present an energy bandgap (E g ) of about 2.75 eV, regardless of the thickness of the samples.
AB - We present the growth of In 2 S 3 onto Cu 3 BiS 3 layers and soda-lime glass (SLG) substrates by using chemical bath deposition (CBD) and physical co-evaporation. The results reveal that the microstructure and the optical properties of the In 2 S 3 films are highly dependent on the growth method. X-ray diffractrograms show that In 2 S 3 films have a higher crystallinity when growing by co-evaporation than by CBD. In 2 S 3 thin films grown by CBD with a thickness below 170 nm have an amorphous structure however when increasing the thickness the films exhibit two diffraction peaks associated to the (1 0 3) and (1 0 7) planes of the β-In 2 S 3 tetragonal structure. It was also found that the In 2 S 3 films present an energy bandgap (E g ) of about 2.75 eV, regardless of the thickness of the samples.
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U2 - 10.1016/j.apsusc.2015.04.032
DO - 10.1016/j.apsusc.2015.04.032
M3 - Article
AN - SCOPUS:84938743648
SN - 0169-4332
VL - 350
SP - 38
EP - 42
JO - Applied Surface Science
JF - Applied Surface Science
ER -
