This work reports results concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu2Se and SnSe2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu2ZnSnSe4 films was analyzed. The electrical behavior of the compound was studied.
|Idioma original||Inglés estadounidense|
|Páginas (desde-hasta)||902 - 904|
|Número de páginas||3|
|Publicación||Canadian Journal of Physics|
|Estado||Publicada - 2014|