TY - GEN
T1 - Fabrication of FCC-SiO2 colloidal crystals using the vertical convective self-assemble method
AU - Castañeda-Uribe, O. A.
AU - Salcedo-Reyes, J. C.
AU - Méndez-Pinzón, H. A.
AU - Pedroza-Rodríguez, A. M.
PY - 2014
Y1 - 2014
N2 - In order to determine the optimal conditions for the growth of high-quality 250 nm-SiO2 colloidal crystals by the vertical convective self-assemble method, the Design of Experiments (DoE) methodology is applied. The influence of the evaporation temperature, the volume fraction, and the pH of the colloidal suspension is studied by means of an analysis of variance (ANOVA) in a 3 3 factorial design. Characteristics of the stacking lattice of the resulting colloidal crystals are determined by scanning electron microscopy and angle-resolved transmittance spectroscopy. Quantitative results from the statistical test show that the temperature is the most critical factor influencing the quality of the colloidal crystal, obtaining highly ordered structures with FCC stacking lattice at a growth temperature of 40°C.
AB - In order to determine the optimal conditions for the growth of high-quality 250 nm-SiO2 colloidal crystals by the vertical convective self-assemble method, the Design of Experiments (DoE) methodology is applied. The influence of the evaporation temperature, the volume fraction, and the pH of the colloidal suspension is studied by means of an analysis of variance (ANOVA) in a 3 3 factorial design. Characteristics of the stacking lattice of the resulting colloidal crystals are determined by scanning electron microscopy and angle-resolved transmittance spectroscopy. Quantitative results from the statistical test show that the temperature is the most critical factor influencing the quality of the colloidal crystal, obtaining highly ordered structures with FCC stacking lattice at a growth temperature of 40°C.
UR - http://www.scopus.com/inward/record.url?scp=84903735648&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84903735648&partnerID=8YFLogxK
U2 - 10.1063/1.4878275
DO - 10.1063/1.4878275
M3 - Conference contribution
AN - SCOPUS:84903735648
SN - 9780735412323
T3 - AIP Conference Proceedings
SP - 43
EP - 46
BT - 7th International Conference on Low Dimensional Structures and Devices, LDSD 2011
PB - American Institute of Physics Inc.
T2 - 7th International Conference on Low Dimensional Structures and Devices, LDSD 2011
Y2 - 22 May 2011 through 27 May 2011
ER -