Study of Heterostructures of Cu3BIS3 - buffer layer measured by Kelvin probe force microscopy measurements (KPFM)1.

Resultado de la investigación: Tipos de Contribuciónes en ConferenciaPaper

1 Cita (Scopus)

Resumen

The interface formed between Cu3BiS3 thin films and the buffer layer is a potentially limiting factor to the performance of solar cells based on Al/Cu3BiS3/buffer heterojunctions. The buffer layers of ZnS and In2S3 were grown by co-evaporation, and tested as an alternative to the traditional CdS deposited by chemical bath deposition. From the Kelvin probe force microscopy measurements, we found the values of the work function of ZnS, In2S3, and CdS, layers deposited into Cu3BiS3. Additionally, different electronic activity was found for different grain boundaries (GBs), from studies under illumination, we also found the net doping concentration and the density of charged GB states for Cu3BiS3 and Cu 3BiS3/CdS. © 2014 Published by NRC Research Press.
Idioma originalEnglish (US)
Páginas892-895
Número de páginas4
DOI
EstadoPublished - ene 1 2014
Eventoconference -
Duración: ene 1 2014 → …

Conference

Conferenceconference
Período1/1/14 → …

Huella dactilar

buffers
microscopy
probes
grain boundaries
heterojunctions
baths
solar cells
illumination
evaporation
thin films
electronics

Citar esto

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title = "Study of Heterostructures of Cu3BIS3 - buffer layer measured by Kelvin probe force microscopy measurements (KPFM)1.",
abstract = "The interface formed between Cu3BiS3 thin films and the buffer layer is a potentially limiting factor to the performance of solar cells based on Al/Cu3BiS3/buffer heterojunctions. The buffer layers of ZnS and In2S3 were grown by co-evaporation, and tested as an alternative to the traditional CdS deposited by chemical bath deposition. From the Kelvin probe force microscopy measurements, we found the values of the work function of ZnS, In2S3, and CdS, layers deposited into Cu3BiS3. Additionally, different electronic activity was found for different grain boundaries (GBs), from studies under illumination, we also found the net doping concentration and the density of charged GB states for Cu3BiS3 and Cu 3BiS3/CdS. {\circledC} 2014 Published by NRC Research Press.",
author = "F. Mesa and D. Fajardo",
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Study of Heterostructures of Cu3BIS3 - buffer layer measured by Kelvin probe force microscopy measurements (KPFM)1. / Mesa, F.; Fajardo, D.

2014. 892-895 Papel presentado en conference, .

Resultado de la investigación: Tipos de Contribuciónes en ConferenciaPaper

TY - CONF

T1 - Study of Heterostructures of Cu3BIS3 - buffer layer measured by Kelvin probe force microscopy measurements (KPFM)1.

AU - Mesa, F.

AU - Fajardo, D.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The interface formed between Cu3BiS3 thin films and the buffer layer is a potentially limiting factor to the performance of solar cells based on Al/Cu3BiS3/buffer heterojunctions. The buffer layers of ZnS and In2S3 were grown by co-evaporation, and tested as an alternative to the traditional CdS deposited by chemical bath deposition. From the Kelvin probe force microscopy measurements, we found the values of the work function of ZnS, In2S3, and CdS, layers deposited into Cu3BiS3. Additionally, different electronic activity was found for different grain boundaries (GBs), from studies under illumination, we also found the net doping concentration and the density of charged GB states for Cu3BiS3 and Cu 3BiS3/CdS. © 2014 Published by NRC Research Press.

AB - The interface formed between Cu3BiS3 thin films and the buffer layer is a potentially limiting factor to the performance of solar cells based on Al/Cu3BiS3/buffer heterojunctions. The buffer layers of ZnS and In2S3 were grown by co-evaporation, and tested as an alternative to the traditional CdS deposited by chemical bath deposition. From the Kelvin probe force microscopy measurements, we found the values of the work function of ZnS, In2S3, and CdS, layers deposited into Cu3BiS3. Additionally, different electronic activity was found for different grain boundaries (GBs), from studies under illumination, we also found the net doping concentration and the density of charged GB states for Cu3BiS3 and Cu 3BiS3/CdS. © 2014 Published by NRC Research Press.

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DO - 10.1139/cjp-2013-0592

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