Resumen
In this work, the dispersion mechanisms affecting the electric transport in CuIn1-xGaxSe2 (CIGS) thin films grown by a chemical reaction of the precursor species, which are evaporated sequentially in two and three-stage processes are analyzed. It was found, through conductivity and Hall coefficient measurements carried out as functions of temperature, that the electrical conductivity of the CuIn1-xGaxSe2 films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range.
Idioma original | Inglés estadounidense |
---|---|
Páginas (desde-hasta) | 1764-1766 |
Número de páginas | 3 |
Publicación | Thin Solid Films |
Volumen | 518 |
N.º | 7 |
DOI | |
Estado | Publicada - ene. 31 2010 |
Publicado de forma externa | Sí |
Áreas temáticas de ASJC Scopus
- Materiales electrónicos, ópticos y magnéticos
- Superficies e interfaces
- Superficies, recubrimientos y láminas
- Metales y aleaciones
- Química de los materiales