Study of electrical properties of CIGS thin films prepared by multistage processes

F. Mesa; C. Calderón; G. Gordillo

doi:10.1016/j.tsf.2009.09.028

Study of electrical properties of CIGS thin films prepared by multistage processes

F. Mesa, C. Calderón, G. Gordillo

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22 Citas (Scopus)

Resumen

In this work, the dispersion mechanisms affecting the electric transport in CuIn_1-xGa_xSe₂ (CIGS) thin films grown by a chemical reaction of the precursor species, which are evaporated sequentially in two and three-stage processes are analyzed. It was found, through conductivity and Hall coefficient measurements carried out as functions of temperature, that the electrical conductivity of the CuIn_1-xGa_xSe₂ films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range.

Idioma original	Inglés estadounidense
Páginas (desde-hasta)	1764-1766
Número de páginas	3
Publicación	Thin Solid Films
Volumen	518
N.º	7
DOI	https://doi.org/10.1016/j.tsf.2009.09.028
Estado	Publicada - ene. 31 2010
Publicado de forma externa	Sí

Áreas temáticas de ASJC Scopus

Materiales electrónicos, ópticos y magnéticos
Superficies e interfaces
Superficies, recubrimientos y láminas
Metales y aleaciones
Química de los materiales

ODS de las Naciones Unidas

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abstract = "In this work, the dispersion mechanisms affecting the electric transport in CuIn1-xGaxSe2 (CIGS) thin films grown by a chemical reaction of the precursor species, which are evaporated sequentially in two and three-stage processes are analyzed. It was found, through conductivity and Hall coefficient measurements carried out as functions of temperature, that the electrical conductivity of the CuIn1-xGaxSe2 films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range.",

author = "F. Mesa and C. Calder{\'o}n and G. Gordillo",

year = "2010",

month = jan,

day = "31",

doi = "10.1016/j.tsf.2009.09.028",

language = "English (US)",

volume = "518",

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T1 - Study of electrical properties of CIGS thin films prepared by multistage processes

AU - Mesa, F.

AU - Calderón, C.

AU - Gordillo, G.

PY - 2010/1/31

Y1 - 2010/1/31

N2 - In this work, the dispersion mechanisms affecting the electric transport in CuIn1-xGaxSe2 (CIGS) thin films grown by a chemical reaction of the precursor species, which are evaporated sequentially in two and three-stage processes are analyzed. It was found, through conductivity and Hall coefficient measurements carried out as functions of temperature, that the electrical conductivity of the CuIn1-xGaxSe2 films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range.

AB - In this work, the dispersion mechanisms affecting the electric transport in CuIn1-xGaxSe2 (CIGS) thin films grown by a chemical reaction of the precursor species, which are evaporated sequentially in two and three-stage processes are analyzed. It was found, through conductivity and Hall coefficient measurements carried out as functions of temperature, that the electrical conductivity of the CuIn1-xGaxSe2 films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range.

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DO - 10.1016/j.tsf.2009.09.028

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SP - 1764

EP - 1766

JO - Thin Solid Films

JF - Thin Solid Films

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Study of electrical properties of CIGS thin films prepared by multistage processes

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Áreas temáticas de ASJC Scopus

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