In this work, the dispersion mechanisms affecting the electric transport in CuIn1-xGaxSe2 (CIGS) thin films grown by a chemical reaction of the precursor species, which are evaporated sequentially in two and three-stage processes are analyzed. It was found, through conductivity and Hall coefficient measurements carried out as functions of temperature, that the electrical conductivity of the CuIn1-xGaxSe2 films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range.
Áreas temáticas de ASJC Scopus
- Materiales electrónicos, ópticos y magnéticos
- Superficies e interfaces
- Superficies, recubrimientos y láminas
- Metales y aleaciones
- Química de los materiales