Study of electrical and morphological properties of AgInSe2 thin films grown by co-evaporation

C. A. Arredondo; F. Mesa; G. Gordillo

doi:10.1109/PVSC.2010.5614199

Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation

C. A. Arredondo
, F. Mesa
, G. Gordillo

Producción científica: Capítulo en Libro/Informe › Contribución a la conferencia

6 Citas (Scopus)

Resumen

AgInSe₂(AISe) thin films grown with chalcopyrite type tetragonal structure using a procedure based on the coevaporation of their precursors in a two stage process, were electrically and morphologically characterized. The effect of the evaporated mass of Ag to evaporated mass of In (m _Ag/m_In) ratio on the electrical and morphological properties as well as on the chemical composition was investigated through Hall voltage, AFM (Atomic Force Microscopy). Atomic force microscopy (AFM) measurements revealed that the AISe films that we have grown, present average values of grain size ranging from 0.3 to 0.45 μm; however, this value increases when the m_Ag/m_In ratio increase. It was also found that the resistivity of the AISe films is strongly affected by both, the m_Ag/m_In ratio and growth temperature, mainly due to changes of the carrier concentration. It was also found that the AgInSe ₂ films present p-type conductivity, a high absorption coefficient (greater than 10⁴ cm^-1) and an energy band gap Eg of about 1.37 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

Idioma original	Inglés estadounidense
Título de la publicación alojada	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Editorial	Institute of Electrical and Electronics Engineers Inc.
Páginas	2433-2438
Número de páginas	6
ISBN (versión impresa)	9781424458912
DOI	https://doi.org/10.1109/PVSC.2010.5614199
Estado	Publicada - 2010
Publicado de forma externa	Sí

Serie de la publicación

Nombre	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (versión impresa)	0160-8371

ODS de las Naciones Unidas

Este resultado contribuye a los siguientes Objetivos de Desarrollo Sostenible

ODS 7: Energía asequible y no contaminante

Áreas temáticas de ASJC Scopus

Ingeniería de control y sistemas
Ingeniería industrial y de fabricación
Ingeniería eléctrica y electrónica

Acceder al documento

10.1109/PVSC.2010.5614199

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Arredondo, C. A., Mesa, F., & Gordillo, G. (2010). Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation. En Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 2433-2438). Artículo 5614199 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2010.5614199

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abstract = "AgInSe2(AISe) thin films grown with chalcopyrite type tetragonal structure using a procedure based on the coevaporation of their precursors in a two stage process, were electrically and morphologically characterized. The effect of the evaporated mass of Ag to evaporated mass of In (m Ag/mIn) ratio on the electrical and morphological properties as well as on the chemical composition was investigated through Hall voltage, AFM (Atomic Force Microscopy). Atomic force microscopy (AFM) measurements revealed that the AISe films that we have grown, present average values of grain size ranging from 0.3 to 0.45 μm; however, this value increases when the mAg/mIn ratio increase. It was also found that the resistivity of the AISe films is strongly affected by both, the mAg/mIn ratio and growth temperature, mainly due to changes of the carrier concentration. It was also found that the AgInSe 2 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.37 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.",

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Arredondo, CA, Mesa, F & Gordillo, G 2010, Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation. En Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614199, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2433-2438. https://doi.org/10.1109/PVSC.2010.5614199

Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation. / Arredondo, C. A.; Mesa, F.; Gordillo, G.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Institute of Electrical and Electronics Engineers Inc., 2010. p. 2433-2438 5614199 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Producción científica: Capítulo en Libro/Informe › Contribución a la conferencia

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N2 - AgInSe2(AISe) thin films grown with chalcopyrite type tetragonal structure using a procedure based on the coevaporation of their precursors in a two stage process, were electrically and morphologically characterized. The effect of the evaporated mass of Ag to evaporated mass of In (m Ag/mIn) ratio on the electrical and morphological properties as well as on the chemical composition was investigated through Hall voltage, AFM (Atomic Force Microscopy). Atomic force microscopy (AFM) measurements revealed that the AISe films that we have grown, present average values of grain size ranging from 0.3 to 0.45 μm; however, this value increases when the mAg/mIn ratio increase. It was also found that the resistivity of the AISe films is strongly affected by both, the mAg/mIn ratio and growth temperature, mainly due to changes of the carrier concentration. It was also found that the AgInSe 2 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.37 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

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Arredondo CA, Mesa F, Gordillo G. Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation. En Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Institute of Electrical and Electronics Engineers Inc. 2010. p. 2433-2438. 5614199. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2010.5614199