Study of electrical and morphological properties of AgInSe2 thin films grown by co-evaporation

C. A. Arredondo; F. Mesa; G. Gordillo

doi:10.1109/PVSC.2010.5614199

Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation

C. A. Arredondo, F. Mesa, G. Gordillo

Producción científica: Capítulo en Libro/Reporte › Contribución a la conferencia

6 Citas (Scopus)

Resumen

AgInSe₂(AISe) thin films grown with chalcopyrite type tetragonal structure using a procedure based on the coevaporation of their precursors in a two stage process, were electrically and morphologically characterized. The effect of the evaporated mass of Ag to evaporated mass of In (m _Ag/m_In) ratio on the electrical and morphological properties as well as on the chemical composition was investigated through Hall voltage, AFM (Atomic Force Microscopy). Atomic force microscopy (AFM) measurements revealed that the AISe films that we have grown, present average values of grain size ranging from 0.3 to 0.45 μm; however, this value increases when the m_Ag/m_In ratio increase. It was also found that the resistivity of the AISe films is strongly affected by both, the m_Ag/m_In ratio and growth temperature, mainly due to changes of the carrier concentration. It was also found that the AgInSe ₂ films present p-type conductivity, a high absorption coefficient (greater than 10⁴ cm^-1) and an energy band gap Eg of about 1.37 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

Idioma original	Inglés estadounidense
Título de la publicación alojada	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Editorial	Institute of Electrical and Electronics Engineers Inc.
Páginas	2433-2438
Número de páginas	6
ISBN (versión impresa)	9781424458912
DOI	https://doi.org/10.1109/PVSC.2010.5614199
Estado	Publicada - 2010
Publicado de forma externa	Sí

Serie de la publicación

Nombre	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (versión impresa)	0160-8371

Áreas temáticas de ASJC Scopus

Ingeniería de control y sistemas
Ingeniería industrial y de fabricación
Ingeniería eléctrica y electrónica

ODS de las Naciones Unidas

Este resultado contribuye a los siguientes Objetivos de Desarrollo Sostenible

Acceder al documento

10.1109/PVSC.2010.5614199

Otros archivos y enlaces

Citar esto

Arredondo, C. A., Mesa, F., & Gordillo, G. (2010). Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation. En Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 2433-2438). Artículo 5614199 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2010.5614199

@inproceedings{886fa08f3188411bb37fee1352da2520,

title = "Study of electrical and morphological properties of AgInSe2 thin films grown by co-evaporation",

abstract = "AgInSe2(AISe) thin films grown with chalcopyrite type tetragonal structure using a procedure based on the coevaporation of their precursors in a two stage process, were electrically and morphologically characterized. The effect of the evaporated mass of Ag to evaporated mass of In (m Ag/mIn) ratio on the electrical and morphological properties as well as on the chemical composition was investigated through Hall voltage, AFM (Atomic Force Microscopy). Atomic force microscopy (AFM) measurements revealed that the AISe films that we have grown, present average values of grain size ranging from 0.3 to 0.45 μm; however, this value increases when the mAg/mIn ratio increase. It was also found that the resistivity of the AISe films is strongly affected by both, the mAg/mIn ratio and growth temperature, mainly due to changes of the carrier concentration. It was also found that the AgInSe 2 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.37 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.",

author = "Arredondo, {C. A.} and F. Mesa and G. Gordillo",

year = "2010",

doi = "10.1109/PVSC.2010.5614199",

language = "English (US)",

isbn = "9781424458912",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2433--2438",

booktitle = "Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010",

address = "United States",

}

Arredondo, CA, Mesa, F & Gordillo, G 2010, Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation. En Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614199, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2433-2438. https://doi.org/10.1109/PVSC.2010.5614199

Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation. / Arredondo, C. A.; Mesa, F.; Gordillo, G.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Institute of Electrical and Electronics Engineers Inc., 2010. p. 2433-2438 5614199 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Producción científica: Capítulo en Libro/Reporte › Contribución a la conferencia

TY - GEN

T1 - Study of electrical and morphological properties of AgInSe2 thin films grown by co-evaporation

AU - Arredondo, C. A.

AU - Mesa, F.

AU - Gordillo, G.

PY - 2010

Y1 - 2010

N2 - AgInSe2(AISe) thin films grown with chalcopyrite type tetragonal structure using a procedure based on the coevaporation of their precursors in a two stage process, were electrically and morphologically characterized. The effect of the evaporated mass of Ag to evaporated mass of In (m Ag/mIn) ratio on the electrical and morphological properties as well as on the chemical composition was investigated through Hall voltage, AFM (Atomic Force Microscopy). Atomic force microscopy (AFM) measurements revealed that the AISe films that we have grown, present average values of grain size ranging from 0.3 to 0.45 μm; however, this value increases when the mAg/mIn ratio increase. It was also found that the resistivity of the AISe films is strongly affected by both, the mAg/mIn ratio and growth temperature, mainly due to changes of the carrier concentration. It was also found that the AgInSe 2 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.37 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

AB - AgInSe2(AISe) thin films grown with chalcopyrite type tetragonal structure using a procedure based on the coevaporation of their precursors in a two stage process, were electrically and morphologically characterized. The effect of the evaporated mass of Ag to evaporated mass of In (m Ag/mIn) ratio on the electrical and morphological properties as well as on the chemical composition was investigated through Hall voltage, AFM (Atomic Force Microscopy). Atomic force microscopy (AFM) measurements revealed that the AISe films that we have grown, present average values of grain size ranging from 0.3 to 0.45 μm; however, this value increases when the mAg/mIn ratio increase. It was also found that the resistivity of the AISe films is strongly affected by both, the mAg/mIn ratio and growth temperature, mainly due to changes of the carrier concentration. It was also found that the AgInSe 2 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.37 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

UR - http://www.scopus.com/inward/record.url?scp=78650114152&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650114152&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2010.5614199

DO - 10.1109/PVSC.2010.5614199

M3 - Conference contribution

AN - SCOPUS:78650114152

SN - 9781424458912

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2433

EP - 2438

BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Arredondo CA, Mesa F, Gordillo G. Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation. En Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Institute of Electrical and Electronics Engineers Inc. 2010. p. 2433-2438. 5614199. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2010.5614199