Structural, morphological, and optoelectrical characterization of Bi 2 S 3 thin films grown by co-evaporation

F. Mesa, C. A. Arredondo, W. Vallejo

Resultado de la investigación: Contribución a RevistaArtículo

Resumen

This work presents the results of synthesis and characterization of polycrystalline n-type Bi 2 S 3 thin films. The films were grown through a chemical reaction from co-evaporation of their precursor elements in a soda-lime glass substrate. The effect of the experimental conditions on the optical, morphological structural properties, the growth rate, and the electrical conductivity (σ) was studied through spectral transmittance, X-ray diffraction (XRD), atomic force microscopy (AFM) and σ versus T measurements, respectively. The results showed that the films grow only in the orthorhombic Bi 2 S 3 bismuthinite phase. It was also found that the Bi 2 S 3 films present an energy band gap (Eg) of about 1.38 eV. In addition to these results, the electrical conductivity of the Bi 2 S 3 films was affected by both the transport of free carriers in extended states of the conduction band and for variable range hopping transport mechanisms, each one predominating in a different temperature range.
Idioma originalEnglish (US)
Número de páginas9
PublicaciónModern Physics Letters B
Volumen30
N.º6
EstadoPublished - 2016

Huella dactilar

evaporation
thin films
electrical resistivity
calcium oxides
energy bands
transmittance
chemical reactions
conduction bands
atomic force microscopy
glass
synthesis
diffraction
x rays
temperature

Citar esto

@article{d654b8f3cac94d719768b91261a1b7db,
title = "Structural, morphological, and optoelectrical characterization of Bi 2 S 3 thin films grown by co-evaporation",
abstract = "This work presents the results of synthesis and characterization of polycrystalline n-type Bi 2 S 3 thin films. The films were grown through a chemical reaction from co-evaporation of their precursor elements in a soda-lime glass substrate. The effect of the experimental conditions on the optical, morphological structural properties, the growth rate, and the electrical conductivity (σ) was studied through spectral transmittance, X-ray diffraction (XRD), atomic force microscopy (AFM) and σ versus T measurements, respectively. The results showed that the films grow only in the orthorhombic Bi 2 S 3 bismuthinite phase. It was also found that the Bi 2 S 3 films present an energy band gap (Eg) of about 1.38 eV. In addition to these results, the electrical conductivity of the Bi 2 S 3 films was affected by both the transport of free carriers in extended states of the conduction band and for variable range hopping transport mechanisms, each one predominating in a different temperature range.",
author = "F. Mesa and Arredondo, {C. A.} and W. Vallejo",
year = "2016",
language = "English (US)",
volume = "30",
journal = "Modern Physics Letters B",
issn = "0217-9849",
publisher = "World Scientific Publishing Co. Pte Ltd",
number = "6",

}

Structural, morphological, and optoelectrical characterization of Bi 2 S 3 thin films grown by co-evaporation. / Mesa, F.; Arredondo, C. A.; Vallejo, W.

En: Modern Physics Letters B, Vol. 30, N.º 6, 2016.

Resultado de la investigación: Contribución a RevistaArtículo

TY - JOUR

T1 - Structural, morphological, and optoelectrical characterization of Bi 2 S 3 thin films grown by co-evaporation

AU - Mesa, F.

AU - Arredondo, C. A.

AU - Vallejo, W.

PY - 2016

Y1 - 2016

N2 - This work presents the results of synthesis and characterization of polycrystalline n-type Bi 2 S 3 thin films. The films were grown through a chemical reaction from co-evaporation of their precursor elements in a soda-lime glass substrate. The effect of the experimental conditions on the optical, morphological structural properties, the growth rate, and the electrical conductivity (σ) was studied through spectral transmittance, X-ray diffraction (XRD), atomic force microscopy (AFM) and σ versus T measurements, respectively. The results showed that the films grow only in the orthorhombic Bi 2 S 3 bismuthinite phase. It was also found that the Bi 2 S 3 films present an energy band gap (Eg) of about 1.38 eV. In addition to these results, the electrical conductivity of the Bi 2 S 3 films was affected by both the transport of free carriers in extended states of the conduction band and for variable range hopping transport mechanisms, each one predominating in a different temperature range.

AB - This work presents the results of synthesis and characterization of polycrystalline n-type Bi 2 S 3 thin films. The films were grown through a chemical reaction from co-evaporation of their precursor elements in a soda-lime glass substrate. The effect of the experimental conditions on the optical, morphological structural properties, the growth rate, and the electrical conductivity (σ) was studied through spectral transmittance, X-ray diffraction (XRD), atomic force microscopy (AFM) and σ versus T measurements, respectively. The results showed that the films grow only in the orthorhombic Bi 2 S 3 bismuthinite phase. It was also found that the Bi 2 S 3 films present an energy band gap (Eg) of about 1.38 eV. In addition to these results, the electrical conductivity of the Bi 2 S 3 films was affected by both the transport of free carriers in extended states of the conduction band and for variable range hopping transport mechanisms, each one predominating in a different temperature range.

UR - https://www.worldscientific.com/doi/abs/10.1142/S0217984916500664

M3 - Article

VL - 30

JO - Modern Physics Letters B

JF - Modern Physics Letters B

SN - 0217-9849

IS - 6

ER -