Optoelectrical, structural and morphological characterization of Cu                         2                         ZnSnSe                         4                          compound used in photovoltaic applications

F. Mesa; A. Leguizamon; A. Dussan; G. Gordillo

doi:10.1016/j.apsusc.2016.04.073

Optoelectrical, structural and morphological characterization of Cu ₂ ZnSnSe ₄ compound used in photovoltaic applications

F. Mesa
, A. Leguizamon
, A. Dussan
, G. Gordillo

Universidad del Rosario

Producción científica: Contribución a revista › Artículo de Investigación › revisión exhaustiva

3 Citas (Scopus)

Resumen

In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu ₂ ZnSnSe ₄ (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied.

Idioma original	Inglés estadounidense
Páginas (desde-hasta)	386-392
Número de páginas	7
Publicación	Applied Surface Science
Volumen	384
DOI	https://doi.org/10.1016/j.apsusc.2016.04.073
Estado	Publicada - oct. 30 2016

ODS de las Naciones Unidas

Este resultado contribuye a los siguientes Objetivos de Desarrollo Sostenible

ODS 7: Energía asequible y no contaminante

Áreas temáticas de ASJC Scopus

Química General
Física de la materia condensada
Física y Astronomía General
Superficies e interfaces
Superficies, recubrimientos y láminas

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title = "Optoelectrical, structural and morphological characterization of Cu 2 ZnSnSe 4 compound used in photovoltaic applications",

abstract = " In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu 2 ZnSnSe 4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied. ",

author = "F. Mesa and A. Leguizamon and A. Dussan and G. Gordillo",

note = "Funding Information: This work was supported by COLCIENCIAS, Universidad Nacional de Colombia and Universidad del Rosario. We thank the Semiconducting Materials and Solar Energy Group led by Dr. Gerardo Gordillo for laboratory support in sample preparation. Publisher Copyright: {\textcopyright} 2016 Elsevier B.V. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",

year = "2016",

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day = "30",

doi = "10.1016/j.apsusc.2016.04.073",

language = "English (US)",

volume = "384",

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Optoelectrical, structural and morphological characterization of Cu ₂ ZnSnSe ₄ compound used in photovoltaic applications. / Mesa, F.; Leguizamon, A.; Dussan, A. et al.
En: Applied Surface Science, Vol. 384, 30.10.2016, p. 386-392.

Producción científica: Contribución a revista › Artículo de Investigación › revisión exhaustiva

TY - JOUR

T1 - Optoelectrical, structural and morphological characterization of Cu 2 ZnSnSe 4 compound used in photovoltaic applications

AU - Mesa, F.

AU - Leguizamon, A.

AU - Dussan, A.

AU - Gordillo, G.

N1 - Funding Information: This work was supported by COLCIENCIAS, Universidad Nacional de Colombia and Universidad del Rosario. We thank the Semiconducting Materials and Solar Energy Group led by Dr. Gerardo Gordillo for laboratory support in sample preparation. Publisher Copyright: © 2016 Elsevier B.V. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2016/10/30

Y1 - 2016/10/30

N2 - In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu 2 ZnSnSe 4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied.

AB - In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu 2 ZnSnSe 4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied.

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Optoelectrical, structural and morphological characterization of Cu 2 ZnSnSe 4 compound used in photovoltaic applications