Optoelectrical, structural and morphological characterization of Cu 2 ZnSnSe 4 compound used in photovoltaic applications

F. Mesa, A. Leguizamon, A. Dussan, G. Gordillo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

3 Citas (Scopus)

Resumen

In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu 2 ZnSnSe 4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied.

Idioma originalInglés estadounidense
Páginas (desde-hasta)386-392
Número de páginas7
PublicaciónApplied Surface Science
Volumen384
DOI
EstadoPublicada - oct. 30 2016

Áreas temáticas de ASJC Scopus

  • Química General
  • Física de la materia condensada
  • Física y Astronomía General
  • Superficies e interfaces
  • Superficies, recubrimientos y láminas

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