Optoelectrical, structural and morphological characterization of Cu2ZnSnSe4 compound used in photovoltaic applications

F. Mesa, A. Leguizamon, A. Dussan, G. Gordillo

Resultado de la investigación: Contribución a RevistaArtículo

3 Citas (Scopus)

Resumen

© 2016 Elsevier B.V.In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied.
Idioma originalEnglish (US)
Páginas (desde-hasta)386-392
Número de páginas7
PublicaciónApplied Surface Science
DOI
EstadoPublished - oct 30 2016

Huella dactilar

Thin films
Conduction bands
Transport properties
Structural properties
Chemical reactions
Evaporation
Temperature
Electric Conductivity

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Optoelectrical, structural and morphological characterization of Cu2ZnSnSe4 compound used in photovoltaic applications. / Mesa, F.; Leguizamon, A.; Dussan, A.; Gordillo, G.

En: Applied Surface Science, 30.10.2016, p. 386-392.

Resultado de la investigación: Contribución a RevistaArtículo

TY - JOUR

T1 - Optoelectrical, structural and morphological characterization of Cu2ZnSnSe4 compound used in photovoltaic applications

AU - Mesa, F.

AU - Leguizamon, A.

AU - Dussan, A.

AU - Gordillo, G.

PY - 2016/10/30

Y1 - 2016/10/30

N2 - © 2016 Elsevier B.V.In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied.

AB - © 2016 Elsevier B.V.In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied.

U2 - 10.1016/j.apsusc.2016.04.073

DO - 10.1016/j.apsusc.2016.04.073

M3 - Article

SP - 386

EP - 392

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -