Magnetoelectric and transport properties of (GaMn)Sb thin films: A ferrimagnetic phase in dilute alloys

F. Mesa, Jorge A. Calderón, A. Dussan

Resultado de la investigación: Contribución a RevistaArtículo

2 Citas (Scopus)

Resumen

We studied the electrical, magnetic, and transport properties of (GaMn)Sb thin films fabricated by the direct current magnetron co-sputtering method. Using X-ray powder diffraction measurements, we identified the presence of ferrimagnetic (Mn2Sb) and ferromagnetic (Mn2Sb2) phases within the films. We also measured the magnetization of the films versus an applied magnetic field as well as their hysteresis curves at room temperature. We determined the electrical and transport properties of the films through temperature-dependent resistivity measurements using the Van Der Pauw method. The main contribution to the transport process was variable range hopping. Hopping parameters were calculated using percolation theory and refined using the diffusional model. In addition, we determined that all samples had p type semiconductor behavior, that there was an increase in the density of localized states near the Fermi level, and that the binary magnetic phases influenced the electrical properties and transport mechanisms.
Idioma originalEnglish (US)
Páginas (desde-hasta)1113–1118
Número de páginas5
PublicaciónApplied Surface Science
Volumen396
DOI
EstadoPublished - 2017

Huella dactilar

Transport properties
Electric properties
Thin films
Fermi level
X ray powder diffraction
Sputtering
Hysteresis
Magnetization
Magnetic properties
Semiconductor materials
Magnetic fields
Temperature

Citar esto

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abstract = "We studied the electrical, magnetic, and transport properties of (GaMn)Sb thin films fabricated by the direct current magnetron co-sputtering method. Using X-ray powder diffraction measurements, we identified the presence of ferrimagnetic (Mn2Sb) and ferromagnetic (Mn2Sb2) phases within the films. We also measured the magnetization of the films versus an applied magnetic field as well as their hysteresis curves at room temperature. We determined the electrical and transport properties of the films through temperature-dependent resistivity measurements using the Van Der Pauw method. The main contribution to the transport process was variable range hopping. Hopping parameters were calculated using percolation theory and refined using the diffusional model. In addition, we determined that all samples had p type semiconductor behavior, that there was an increase in the density of localized states near the Fermi level, and that the binary magnetic phases influenced the electrical properties and transport mechanisms.",
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Magnetoelectric and transport properties of (GaMn)Sb thin films: A ferrimagnetic phase in dilute alloys. / Mesa, F.; Calderón, Jorge A.; Dussan, A.

En: Applied Surface Science, Vol. 396, 2017, p. 1113–1118.

Resultado de la investigación: Contribución a RevistaArtículo

TY - JOUR

T1 - Magnetoelectric and transport properties of (GaMn)Sb thin films: A ferrimagnetic phase in dilute alloys

AU - Mesa, F.

AU - Calderón, Jorge A.

AU - Dussan, A.

PY - 2017

Y1 - 2017

N2 - We studied the electrical, magnetic, and transport properties of (GaMn)Sb thin films fabricated by the direct current magnetron co-sputtering method. Using X-ray powder diffraction measurements, we identified the presence of ferrimagnetic (Mn2Sb) and ferromagnetic (Mn2Sb2) phases within the films. We also measured the magnetization of the films versus an applied magnetic field as well as their hysteresis curves at room temperature. We determined the electrical and transport properties of the films through temperature-dependent resistivity measurements using the Van Der Pauw method. The main contribution to the transport process was variable range hopping. Hopping parameters were calculated using percolation theory and refined using the diffusional model. In addition, we determined that all samples had p type semiconductor behavior, that there was an increase in the density of localized states near the Fermi level, and that the binary magnetic phases influenced the electrical properties and transport mechanisms.

AB - We studied the electrical, magnetic, and transport properties of (GaMn)Sb thin films fabricated by the direct current magnetron co-sputtering method. Using X-ray powder diffraction measurements, we identified the presence of ferrimagnetic (Mn2Sb) and ferromagnetic (Mn2Sb2) phases within the films. We also measured the magnetization of the films versus an applied magnetic field as well as their hysteresis curves at room temperature. We determined the electrical and transport properties of the films through temperature-dependent resistivity measurements using the Van Der Pauw method. The main contribution to the transport process was variable range hopping. Hopping parameters were calculated using percolation theory and refined using the diffusional model. In addition, we determined that all samples had p type semiconductor behavior, that there was an increase in the density of localized states near the Fermi level, and that the binary magnetic phases influenced the electrical properties and transport mechanisms.

U2 - 10.1016/j.apsusc.2016.11.096

DO - 10.1016/j.apsusc.2016.11.096

M3 - Article

VL - 396

SP - 1113

EP - 1118

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -