TY - JOUR
T1 - Large thermoelectric figure of merit in graphene layered devices at low temperature
AU - Olaya, Daniel
AU - Hurtado-Morales, Mikel
AU - Gómez, Daniel
AU - Castañeda-Uribe, Octavio Alejandro
AU - Juang, Zhen Yu
AU - Hernández, Yenny
N1 - Funding Information:
The authors would like to acknowledge Prof. Lain-Jong Li (King Abdullah University of Science and Technology) and Prof. Juan Gabriel Ramirez (Universidad de los Andes) for helpful discussions.
Publisher Copyright:
© 2017 IOP Publishing Ltd.
PY - 2018/1
Y1 - 2018/1
N2 - Nanostructured materials have emerged as an alternative to enhance the figure of merit (ZT) of thermoelectric (TE) devices. Graphene exhibits a high electrical conductivity (in-plane) that is necessary for a high ZT; however, this effect is countered by its impressive thermal conductivity. In this work TE layered devices composed of electrochemically exfoliated graphene (EEG) and a phonon blocking material such as poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), polyaniline (PANI) and gold nanoparticles (AuNPs) at the interface were prepared. The figure of merit, ZT, of each device was measured in the cross-plane direction using the Transient Harman Method (THM) and complemented with AFM-based measurements. The results show remarkable high ZT values (0.81 < ZT < 2.45) that are directly related with the topography, surface potential, capacitance gradient and resistance of the devices at the nanoscale.
AB - Nanostructured materials have emerged as an alternative to enhance the figure of merit (ZT) of thermoelectric (TE) devices. Graphene exhibits a high electrical conductivity (in-plane) that is necessary for a high ZT; however, this effect is countered by its impressive thermal conductivity. In this work TE layered devices composed of electrochemically exfoliated graphene (EEG) and a phonon blocking material such as poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), polyaniline (PANI) and gold nanoparticles (AuNPs) at the interface were prepared. The figure of merit, ZT, of each device was measured in the cross-plane direction using the Transient Harman Method (THM) and complemented with AFM-based measurements. The results show remarkable high ZT values (0.81 < ZT < 2.45) that are directly related with the topography, surface potential, capacitance gradient and resistance of the devices at the nanoscale.
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U2 - 10.1088/2053-1583/aa90d8
DO - 10.1088/2053-1583/aa90d8
M3 - Research Article
AN - SCOPUS:85040106633
SN - 2053-1583
VL - 5
JO - 2D Materials
JF - 2D Materials
IS - 1
M1 - 011004
ER -