Junction formation of Cu ₃BiS ₃ investigated by Kelvin probe force microscopy and surface photovoltage measurements

Ingeniería y ciencia de los materiales

• Buffer layers 96%
• Surface measurement 85%
• Microscopic examination 73%
• Energy gap 30%
• Thin film solar cells 20%
• Passivation 16%
• Surface defects 16%
• Energy harvesting 13%
• Grain boundaries 13%
• Thin films 12%
• Semiconductor materials 12%
• Wavelength 11%
• Defects 9%
• Experiments 4%

Compuestos químicos

• Kelvin Probe Force Microscopy 100%
• Photovoltage 80%
• Buffer Solution 44%
• Surface 21%
• Band Gap 20%
• Band Bending 19%
• Surface Defect 16%
• Work Function 15%
• Grain Boundary 14%
• Chemical Passivation 13%
• Charge Separation 13%
• Polycrystalline Solid 12%
• Solar Cell 11%
• Semiconductor 10%
• Wavelength 9%
• Energy 6%
• Application 4%

Física y astronomía

• photovoltages 80%
• buffers 47%
• microscopy 47%
• probes 40%
• absorbers (materials) 15%
• polarization (charge separation) 13%
• surface defects 12%
• thin films 11%
• passivity 10%
• absorbers 9%
• solar cells 8%
• grain boundaries 8%
• preparation 8%
• defects 6%
• excitation 5%
• wavelengths 5%
• energy 3%