Hopping processes in nanocrystalline materials used for photovoltaic applications using a diffusion model

A. Dussan, F. Mesa

Resultado de la investigación: Contribución a RevistaArtículo

Resumen

Here, we present variable range hopping (VRH) models, nearest neighbor hopping (NNH) and potential barriers present at the grain boundaries, as well as mechanisms of electrical transport predominant in semiconductor materials for photovoltaic applications. We performed dark conductivity measures according to temperature for low temperature regions between 120 and 400 K in Si and Cu3BiS2 and Cu2ZnSnSe4 compounds. Using the percolation theory, we obtained hopping parameters and the density of states near the Fermi, N(EF) level for all samples. Using the approach by Mott for VRH, we obtained the diffusion model, which established the relationship between conductivity and density of defect states or localized gap states of the material. The comparative analysis between models evidenced that it is possible to obtain improvement of an order of magnitude in the values of each of the hopping parameters that characterize the material.
Idioma originalEnglish (US)
Páginas (desde-hasta)107-113
Número de páginas7
PublicaciónUniversitas Scientiarum
DOI
EstadoPublished - ene 1 2014

Huella dactilar

nanocrystals
conductivity
grain boundaries
defects
temperature

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abstract = "Here, we present variable range hopping (VRH) models, nearest neighbor hopping (NNH) and potential barriers present at the grain boundaries, as well as mechanisms of electrical transport predominant in semiconductor materials for photovoltaic applications. We performed dark conductivity measures according to temperature for low temperature regions between 120 and 400 K in Si and Cu3BiS2 and Cu2ZnSnSe4 compounds. Using the percolation theory, we obtained hopping parameters and the density of states near the Fermi, N(EF) level for all samples. Using the approach by Mott for VRH, we obtained the diffusion model, which established the relationship between conductivity and density of defect states or localized gap states of the material. The comparative analysis between models evidenced that it is possible to obtain improvement of an order of magnitude in the values of each of the hopping parameters that characterize the material.",
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Hopping processes in nanocrystalline materials used for photovoltaic applications using a diffusion model. / Dussan, A.; Mesa, F.

En: Universitas Scientiarum, 01.01.2014, p. 107-113.

Resultado de la investigación: Contribución a RevistaArtículo

TY - JOUR

T1 - Hopping processes in nanocrystalline materials used for photovoltaic applications using a diffusion model

AU - Dussan, A.

AU - Mesa, F.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Here, we present variable range hopping (VRH) models, nearest neighbor hopping (NNH) and potential barriers present at the grain boundaries, as well as mechanisms of electrical transport predominant in semiconductor materials for photovoltaic applications. We performed dark conductivity measures according to temperature for low temperature regions between 120 and 400 K in Si and Cu3BiS2 and Cu2ZnSnSe4 compounds. Using the percolation theory, we obtained hopping parameters and the density of states near the Fermi, N(EF) level for all samples. Using the approach by Mott for VRH, we obtained the diffusion model, which established the relationship between conductivity and density of defect states or localized gap states of the material. The comparative analysis between models evidenced that it is possible to obtain improvement of an order of magnitude in the values of each of the hopping parameters that characterize the material.

AB - Here, we present variable range hopping (VRH) models, nearest neighbor hopping (NNH) and potential barriers present at the grain boundaries, as well as mechanisms of electrical transport predominant in semiconductor materials for photovoltaic applications. We performed dark conductivity measures according to temperature for low temperature regions between 120 and 400 K in Si and Cu3BiS2 and Cu2ZnSnSe4 compounds. Using the percolation theory, we obtained hopping parameters and the density of states near the Fermi, N(EF) level for all samples. Using the approach by Mott for VRH, we obtained the diffusion model, which established the relationship between conductivity and density of defect states or localized gap states of the material. The comparative analysis between models evidenced that it is possible to obtain improvement of an order of magnitude in the values of each of the hopping parameters that characterize the material.

U2 - 10.11144/Javeriana. SC19-2.phmd

DO - 10.11144/Javeriana. SC19-2.phmd

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EP - 113

JO - Universitas Scientiarum

JF - Universitas Scientiarum

SN - 0122-7483

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