Efecto Hall y estudio de fotovoltaje superficial transiente (SPV) en películas delgadas de Cu3BiS3

F. Mesa, A. Dussan, B. A. Paez-Sierra, H. Rodriguez-Hernandez

Resultado de la investigación: Contribución a una revistaArtículorevisión exhaustiva

4 Citas (Scopus)

Resumen

Here, we present the electrical properties of the compound Cu3BiS3 deposited by co-evaporation. This new compound may have the properties necessary to be used as an absorbent layer in solar cells. The samples were characterized by Hall effect and transient surface photovoltage (SPV) measurements. Using Hall effect measurements, we found that the concentration of n charge carriers is in the order of 1016 cm-3 irrespective of the Cu/Bi mass ratio. We also found that the mobility of this compound (μ in the order of 4 cm2V-1s-1) varies according to the transport mechanisms that govern it and are dependent on temperature. Based on the SPV, we found a high density of surface defects, which can be passivated by superimposing a buffer layer over the Cu3BiS3 compound.

Título traducido de la contribuciónHall effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films
Idioma originalEspañol
Páginas (desde-hasta)99-105
Número de páginas7
PublicaciónUniversitas Scientiarum
Volumen19
N.º2
DOI
EstadoPublicada - 2014

All Science Journal Classification (ASJC) codes

  • General

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Profundice en los temas de investigación de 'Efecto Hall y estudio de fotovoltaje superficial transiente (SPV) en películas delgadas de Cu<sub>3</sub>BiS<sub>3</sub>'. En conjunto forman una huella única.

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