Hall effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films

F. Mesa, A. Dussan, B. A. Paez-Sierra, H. Rodriguez-Hernandez

Resultado de la investigación: Contribución a RevistaArtículo

1 Cita (Scopus)

Resumen

Here, we present the electrical properties of the compound Cu3BiS3 deposited by co-evaporation. This new compound may have the properties necessary to be used as an absorbent layer in solar cells. The samples were characterized by Hall effect and transient surface photovoltage (SPV) measurements. Using Hall effect measurements, we found that the concentration of n charge carriers is in the order of 1016 cm-3 irrespective of the Cu/Bi mass ratio. We also found that the mobility of this compound (μ in the order of 4 cm2V-1s-1) varies according to the transport mechanisms that govern it and are dependent on temperature. Based on the SPV, we found a high density of surface defects, which can be passivated by superimposing a buffer layer over the Cu3BiS3 compound.
Idioma originalEnglish (US)
Páginas (desde-hasta)99-105
Número de páginas7
PublicaciónUniversitas Scientiarum
DOI
EstadoPublished - ene 1 2014

Huella dactilar

photovoltages
Hall effect
absorbents
surface defects
thin films
mass ratios
charge carriers
buffers
solar cells
electrical properties
evaporation
temperature

Citar esto

Mesa, F. ; Dussan, A. ; Paez-Sierra, B. A. ; Rodriguez-Hernandez, H. / Hall effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films. En: Universitas Scientiarum. 2014 ; pp. 99-105.
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Hall effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films. / Mesa, F.; Dussan, A.; Paez-Sierra, B. A.; Rodriguez-Hernandez, H.

En: Universitas Scientiarum, 01.01.2014, p. 99-105.

Resultado de la investigación: Contribución a RevistaArtículo

TY - JOUR

T1 - Hall effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films

AU - Mesa, F.

AU - Dussan, A.

AU - Paez-Sierra, B. A.

AU - Rodriguez-Hernandez, H.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Here, we present the electrical properties of the compound Cu3BiS3 deposited by co-evaporation. This new compound may have the properties necessary to be used as an absorbent layer in solar cells. The samples were characterized by Hall effect and transient surface photovoltage (SPV) measurements. Using Hall effect measurements, we found that the concentration of n charge carriers is in the order of 1016 cm-3 irrespective of the Cu/Bi mass ratio. We also found that the mobility of this compound (μ in the order of 4 cm2V-1s-1) varies according to the transport mechanisms that govern it and are dependent on temperature. Based on the SPV, we found a high density of surface defects, which can be passivated by superimposing a buffer layer over the Cu3BiS3 compound.

AB - Here, we present the electrical properties of the compound Cu3BiS3 deposited by co-evaporation. This new compound may have the properties necessary to be used as an absorbent layer in solar cells. The samples were characterized by Hall effect and transient surface photovoltage (SPV) measurements. Using Hall effect measurements, we found that the concentration of n charge carriers is in the order of 1016 cm-3 irrespective of the Cu/Bi mass ratio. We also found that the mobility of this compound (μ in the order of 4 cm2V-1s-1) varies according to the transport mechanisms that govern it and are dependent on temperature. Based on the SPV, we found a high density of surface defects, which can be passivated by superimposing a buffer layer over the Cu3BiS3 compound.

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DO - 10.11144/Javeriana.SC19-2.ehef

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EP - 105

JO - Universitas Scientiarum

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