False memory and level-of-processing effect: An event-related potential study

María Soledad Beato, Angela Boldini, Sara Cadavid

Resultado de la investigación: Contribución a una revistaArtículo

11 Citas (Scopus)


Event-related potentials (ERPs) were used to determine the effects of level of processing on true and false memory, using the Deese–Roediger–McDermott (DRM) paradigm. In the DRM paradigm, lists of words highly associated to a single nonpresented word (the ‘critical lure’) are studied and, in a subsequent memory test, critical lures are often falsely remembered. Lists with three critical lures per list were auditorily presented here to participants who studied them with either a shallow (saying whether the word contained the letter ‘o’) or a deep (creating a mental image of the word) processing task. Visual presentation modality was used on a final recognition test. True recognition of studied words was significantly higher after deep encoding, whereas false recognition of nonpresented critical lures was similar in both experimental groups. At the ERP level, true and false recognition showed similar patterns: no FN400 effect was found, whereas comparable left parietal and late right frontal old/new effects were found for true and false recognition in both experimental conditions. Items studied under shallow encoding conditions elicited more positive ERP than items studied under deep encoding conditions at a 1000–1500ms interval. These ERP results suggest that true and false recognition share some common underlying processes. Differential effects of level of processing on true and false memory were found only at the behavioral level but not
at the ERP level.
Idioma originalInglés estadounidense
Páginas (desde-hasta)804-808
Número de páginas5
EstadoPublicada - sep 12 2012
Publicado de forma externa

All Science Journal Classification (ASJC) codes

  • Neurociencia cognitiva
  • Psicología experimental y cognitiva
  • Neuropsicología y psicología fisiológica

Huella Profundice en los temas de investigación de 'False memory and level-of-processing effect: An event-related potential study'. En conjunto forman una huella única.

  • Citar esto