Evidence of trapping levels and photoelectric properties of Cu3BiS3 thin films

F. Mesa, A. Dussan, G. Gordillo

Resultado de la investigación: Contribución a una revistaArtículorevisión exhaustiva

31 Citas (Scopus)

Resumen

Voltage and Cu/Bi ratio mass dependence of photocurrent was studied in Cu3BiS3 thin films prepared by co-evaporation technique. The intensity dependence of steady state photocurrent (Iph) follows a power law with intensity (F), Iph ∝ Fγ where the power γ is in the range between 0.5 and 1.0, which suggests monomolecular recombination process. Photocurrent signal was found to be decaying as a function of both applied voltage and intensity, initially decreasing at considerably fast rates and later at slower ones due to the continuos distribution of defect states. Additionally, the differential life time constants were calculated. Measurements of temperature effect on conductivity (from 100 K to 450 K) were carried out. It was found that at temperatures greater than 350 K, the conductivity is predominantly affected by transport of free carriers in extended states of the conduction band, whereas in the range of temperatures below 250 K, the conductivity is dominated by the VRH (Variable Range Hopping) transport mechanism.

Idioma originalInglés estadounidense
Páginas (desde-hasta)5227-5230
Número de páginas4
PublicaciónPhysica B: Condensed Matter
Volumen404
N.º23-24
DOI
EstadoPublicada - dic. 15 2009
Publicado de forma externa

Áreas temáticas de ASJC Scopus

  • Materiales electrónicos, ópticos y magnéticos
  • Física de la materia condensada
  • Ingeniería eléctrica y electrónica

Huella

Profundice en los temas de investigación de 'Evidence of trapping levels and photoelectric properties of Cu3BiS3 thin films'. En conjunto forman una huella única.

Citar esto