Electronic structure and magnetism of Mn-doped GaSb for spintronic applications: A DFT study

N. Seña, A. Dussan, F. Mesa, E. Castaño, R. González-Hernández

Resultado de la investigación: Contribución a una revistaArtículorevisión exhaustiva

28 Citas (Scopus)

Resumen

We have carried out first-principles spin polarized calculations to obtain comprehensive information regarding the structural, magnetic, and electronic properties of the Mn-doped GaSb compound with dopant concentrations: x = 0.062, 0.083, 0.125, 0.25, and 0.50. The plane-wave pseudopotential method was used in order to calculate total energies and electronic structures. It was found that the MnGa substitution is the most stable configuration with a formation energy of ∼1.60 eV/Mn-atom. The calculated density of states shows that the half-metallic ferromagnetism is energetically stable for all dopant concentrations with a total magnetization of about 4.0 μB/Mn-atom. The results indicate that the magnetic ground state originates from the strong hybridization between Mn-d and Sb-p states, which agree with previous studies on Mn-doped wide gap semiconductors. This study gives new clues to the fabrication of diluted magnetic semiconductors.

Idioma originalInglés estadounidense
Número de artículo051704
PublicaciónJournal of Applied Physics
Volumen120
N.º5
DOI
EstadoPublicada - ago. 7 2016

Áreas temáticas de ASJC Scopus

  • Física y astronomía (todo)

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