Effect of preparation conditions on the properties of Cu 3BiS3 thin films grown by a two - Step process

F. Mesa, G. Gordillo

Resultado de la investigación: Contribución a una revistaArtículorevisión exhaustiva

24 Citas (Scopus)


Cu3BiS3 thin films were prepared on soda-lime glass substrates by co-evaporation of the precursors in a two-step process; for that, the metallic precursors were evaporated from a tungsten boat in presence of elemental sulfur evaporated from a tantalum effusion cell. The films were characterized by spectral transmittance, atomic force microscopy AFM and x-ray diffraction (XRD) measurements to investigate the effect of the growth conditions on the optical, morphological and structural properties. The results revealed that, independently of the deposition conditions, the films grow only in the orthorhombic Cu3BiS3 phase. It was also found that the Cu3BiS3 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.41 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

Idioma originalInglés estadounidense
Número de artículo012019
PublicaciónJournal of Physics: Conference Series
EstadoPublicada - 2009
Publicado de forma externa

All Science Journal Classification (ASJC) codes

  • Física y astronomía (todo)


Profundice en los temas de investigación de 'Effect of preparation conditions on the properties of Cu <sub>3</sub>BiS<sub>3</sub> thin films grown by a two - Step process'. En conjunto forman una huella única.

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