Study of phoconductive and electrical properties of AgInS 2 thin films prepared by co-evaporation

C. A. Arredondo; F. Mesa; E. Romero; G. Gordillo

doi:10.1109/PVSC.2011.6185909

Study of phoconductive and electrical properties of AgInS ₂ thin films prepared by co-evaporation

C. A. Arredondo
, F. Mesa
, E. Romero
, G. Gordillo

Research output: Chapter in Book/Inform › Conference contribution

Abstract

AgInS ₂ (AIS) thin films with chalcopyrite type tetragonal structure were grown using a procedure based on the co-evaporation of their precursors in a two stage process. The effect of the evaporated mass of Ag to evaporated mass of In (m _Ag/m _In) ratio on the electrical transport properties was investigated through temperature dependent conductivity and Hall voltage measurements carried out in the range between 90K and 600K. The study revealed that the electrical conductivity of the AIS films is affected by hole transport in extended states of the valence band as well as by variable range hopping (VRH) transport mechanism. Transient photocurrent measurements, indicated that the electrical transport is affected by recombination processes via band to band transitions and trap assisted transitions, being the band to band recombination de dominant one. It was also found that the AgInS ₂ thin films present p-type conductivity, a high absorption coefficient (greater than 10 ⁴ cm ^-1) and an energy band gap E _g of about 1.94 eV, indicating that this compound has good properties to perform as absorbent layer on the top cell in two junction tandem solar cells.

Original language	English (US)
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	320-325
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2011.6185909
State	Published - 2011
Externally published	Yes
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: Jun 19 2011 → Jun 24 2011

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	6/19/11 → 6/24/11

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2011.6185909

Cite this

Arredondo, C. A., Mesa, F., Romero, E., & Gordillo, G. (2011). Study of phoconductive and electrical properties of AgInS ₂ thin films prepared by co-evaporation. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 320-325). Article 6185909 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6185909

@inproceedings{876a3d20bb744fe697e6ece03b39c2f8,

title = "Study of phoconductive and electrical properties of AgInS 2 thin films prepared by co-evaporation",

abstract = "AgInS 2 (AIS) thin films with chalcopyrite type tetragonal structure were grown using a procedure based on the co-evaporation of their precursors in a two stage process. The effect of the evaporated mass of Ag to evaporated mass of In (m Ag/m In) ratio on the electrical transport properties was investigated through temperature dependent conductivity and Hall voltage measurements carried out in the range between 90K and 600K. The study revealed that the electrical conductivity of the AIS films is affected by hole transport in extended states of the valence band as well as by variable range hopping (VRH) transport mechanism. Transient photocurrent measurements, indicated that the electrical transport is affected by recombination processes via band to band transitions and trap assisted transitions, being the band to band recombination de dominant one. It was also found that the AgInS 2 thin films present p-type conductivity, a high absorption coefficient (greater than 10 4 cm -1) and an energy band gap E g of about 1.94 eV, indicating that this compound has good properties to perform as absorbent layer on the top cell in two junction tandem solar cells.",

author = "Arredondo, \{C. A.\} and F. Mesa and E. Romero and G. Gordillo",

year = "2011",

doi = "10.1109/PVSC.2011.6185909",

language = "English (US)",

isbn = "9781424499656",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "320--325",

booktitle = "Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011",

}

Arredondo, CA, Mesa, F, Romero, E & Gordillo, G 2011, Study of phoconductive and electrical properties of AgInS ₂ thin films prepared by co-evaporation. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6185909, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 320-325, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 6/19/11. https://doi.org/10.1109/PVSC.2011.6185909

Study of phoconductive and electrical properties of AgInS ₂ thin films prepared by co-evaporation. / Arredondo, C. A.; Mesa, F.; Romero, E. et al.
Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 320-325 6185909 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Inform › Conference contribution

TY - GEN

T1 - Study of phoconductive and electrical properties of AgInS 2 thin films prepared by co-evaporation

AU - Arredondo, C. A.

AU - Mesa, F.

AU - Romero, E.

AU - Gordillo, G.

PY - 2011

Y1 - 2011

N2 - AgInS 2 (AIS) thin films with chalcopyrite type tetragonal structure were grown using a procedure based on the co-evaporation of their precursors in a two stage process. The effect of the evaporated mass of Ag to evaporated mass of In (m Ag/m In) ratio on the electrical transport properties was investigated through temperature dependent conductivity and Hall voltage measurements carried out in the range between 90K and 600K. The study revealed that the electrical conductivity of the AIS films is affected by hole transport in extended states of the valence band as well as by variable range hopping (VRH) transport mechanism. Transient photocurrent measurements, indicated that the electrical transport is affected by recombination processes via band to band transitions and trap assisted transitions, being the band to band recombination de dominant one. It was also found that the AgInS 2 thin films present p-type conductivity, a high absorption coefficient (greater than 10 4 cm -1) and an energy band gap E g of about 1.94 eV, indicating that this compound has good properties to perform as absorbent layer on the top cell in two junction tandem solar cells.

AB - AgInS 2 (AIS) thin films with chalcopyrite type tetragonal structure were grown using a procedure based on the co-evaporation of their precursors in a two stage process. The effect of the evaporated mass of Ag to evaporated mass of In (m Ag/m In) ratio on the electrical transport properties was investigated through temperature dependent conductivity and Hall voltage measurements carried out in the range between 90K and 600K. The study revealed that the electrical conductivity of the AIS films is affected by hole transport in extended states of the valence band as well as by variable range hopping (VRH) transport mechanism. Transient photocurrent measurements, indicated that the electrical transport is affected by recombination processes via band to band transitions and trap assisted transitions, being the band to band recombination de dominant one. It was also found that the AgInS 2 thin films present p-type conductivity, a high absorption coefficient (greater than 10 4 cm -1) and an energy band gap E g of about 1.94 eV, indicating that this compound has good properties to perform as absorbent layer on the top cell in two junction tandem solar cells.

UR - https://www.scopus.com/pages/publications/84861037068

UR - https://www.scopus.com/pages/publications/84861037068#tab=citedBy

U2 - 10.1109/PVSC.2011.6185909

DO - 10.1109/PVSC.2011.6185909

M3 - Conference contribution

AN - SCOPUS:84861037068

SN - 9781424499656

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 320

EP - 325

BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

Y2 - 19 June 2011 through 24 June 2011

ER -