Study of electrical properties of CIGS thin films prepared by multistage processes

F. Mesa, C. Calderón, G. Gordillo

Research output: Contribution to journalArticlepeer-review

20 Citations (SciVal)

Abstract

In this work, the dispersion mechanisms affecting the electric transport in CuIn1-xGaxSe2 (CIGS) thin films grown by a chemical reaction of the precursor species, which are evaporated sequentially in two and three-stage processes are analyzed. It was found, through conductivity and Hall coefficient measurements carried out as functions of temperature, that the electrical conductivity of the CuIn1-xGaxSe2 films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range.

Original languageEnglish (US)
Pages (from-to)1764-1766
Number of pages3
JournalThin Solid Films
Volume518
Issue number7
DOIs
StatePublished - Jan 31 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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