Abstract
In this work, the dispersion mechanisms affecting the electric transport in CuIn1-xGaxSe2 (CIGS) thin films grown by a chemical reaction of the precursor species, which are evaporated sequentially in two and three-stage processes are analyzed. It was found, through conductivity and Hall coefficient measurements carried out as functions of temperature, that the electrical conductivity of the CuIn1-xGaxSe2 films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range.
Original language | English (US) |
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Pages (from-to) | 1764-1766 |
Number of pages | 3 |
Journal | Thin Solid Films |
Volume | 518 |
Issue number | 7 |
DOIs | |
State | Published - Jan 31 2010 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry