Study of electrical and morphological properties of AgInSe2 thin films grown by co-evaporation

C. A. Arredondo; F. Mesa; G. Gordillo

doi:10.1109/PVSC.2010.5614199

Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation

C. A. Arredondo
, F. Mesa
, G. Gordillo

Research output: Chapter in Book/Inform › Conference contribution

6 Scopus citations

Abstract

AgInSe₂(AISe) thin films grown with chalcopyrite type tetragonal structure using a procedure based on the coevaporation of their precursors in a two stage process, were electrically and morphologically characterized. The effect of the evaporated mass of Ag to evaporated mass of In (m _Ag/m_In) ratio on the electrical and morphological properties as well as on the chemical composition was investigated through Hall voltage, AFM (Atomic Force Microscopy). Atomic force microscopy (AFM) measurements revealed that the AISe films that we have grown, present average values of grain size ranging from 0.3 to 0.45 μm; however, this value increases when the m_Ag/m_In ratio increase. It was also found that the resistivity of the AISe films is strongly affected by both, the m_Ag/m_In ratio and growth temperature, mainly due to changes of the carrier concentration. It was also found that the AgInSe ₂ films present p-type conductivity, a high absorption coefficient (greater than 10⁴ cm^-1) and an energy band gap Eg of about 1.37 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

Original language	English (US)
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2433-2438
Number of pages	6
ISBN (Print)	9781424458912
DOIs	https://doi.org/10.1109/PVSC.2010.5614199
State	Published - 2010
Externally published	Yes

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2010.5614199

Cite this

Arredondo, C. A., Mesa, F., & Gordillo, G. (2010). Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 2433-2438). Article 5614199 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2010.5614199

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abstract = "AgInSe2(AISe) thin films grown with chalcopyrite type tetragonal structure using a procedure based on the coevaporation of their precursors in a two stage process, were electrically and morphologically characterized. The effect of the evaporated mass of Ag to evaporated mass of In (m Ag/mIn) ratio on the electrical and morphological properties as well as on the chemical composition was investigated through Hall voltage, AFM (Atomic Force Microscopy). Atomic force microscopy (AFM) measurements revealed that the AISe films that we have grown, present average values of grain size ranging from 0.3 to 0.45 μm; however, this value increases when the mAg/mIn ratio increase. It was also found that the resistivity of the AISe films is strongly affected by both, the mAg/mIn ratio and growth temperature, mainly due to changes of the carrier concentration. It was also found that the AgInSe 2 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.37 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.",

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Arredondo, CA, Mesa, F & Gordillo, G 2010, Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614199, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2433-2438. https://doi.org/10.1109/PVSC.2010.5614199

Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation. / Arredondo, C. A.; Mesa, F.; Gordillo, G.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Institute of Electrical and Electronics Engineers Inc., 2010. p. 2433-2438 5614199 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Inform › Conference contribution

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N2 - AgInSe2(AISe) thin films grown with chalcopyrite type tetragonal structure using a procedure based on the coevaporation of their precursors in a two stage process, were electrically and morphologically characterized. The effect of the evaporated mass of Ag to evaporated mass of In (m Ag/mIn) ratio on the electrical and morphological properties as well as on the chemical composition was investigated through Hall voltage, AFM (Atomic Force Microscopy). Atomic force microscopy (AFM) measurements revealed that the AISe films that we have grown, present average values of grain size ranging from 0.3 to 0.45 μm; however, this value increases when the mAg/mIn ratio increase. It was also found that the resistivity of the AISe films is strongly affected by both, the mAg/mIn ratio and growth temperature, mainly due to changes of the carrier concentration. It was also found that the AgInSe 2 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.37 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

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Arredondo CA, Mesa F, Gordillo G. Study of electrical and morphological properties of AgInSe₂ thin films grown by co-evaporation. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Institute of Electrical and Electronics Engineers Inc. 2010. p. 2433-2438. 5614199. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2010.5614199