Study of electrical and morphological properties of AgInSe2 thin films grown by co-evaporation

C. A. Arredondo, F. Mesa, G. Gordillo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

AgInSe2(AISe) thin films grown with chalcopyrite type tetragonal structure using a procedure based on the coevaporation of their precursors in a two stage process, were electrically and morphologically characterized. The effect of the evaporated mass of Ag to evaporated mass of In (m Ag/mIn) ratio on the electrical and morphological properties as well as on the chemical composition was investigated through Hall voltage, AFM (Atomic Force Microscopy). Atomic force microscopy (AFM) measurements revealed that the AISe films that we have grown, present average values of grain size ranging from 0.3 to 0.45 μm; however, this value increases when the mAg/mIn ratio increase. It was also found that the resistivity of the AISe films is strongly affected by both, the mAg/mIn ratio and growth temperature, mainly due to changes of the carrier concentration. It was also found that the AgInSe 2 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.37 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

Original languageEnglish (US)
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2433-2438
Number of pages6
ISBN (Print)9781424458912
DOIs
StatePublished - 2010
Externally publishedYes

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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