Structural, optical and morphological properties of Ga _1-xMn _xAs thin films deposited by magnetron sputtering for spintronic device applications

Keyphrases

• Morphological Properties 100%
• Ni-Mn-Ga 100%
• Device Application 100%
• Structural & Optical Properties 100%
• Spintronic Devices 100%
• Magnetron Sputtering 100%
• Electronic Devices 50%
• Atomic Force Microscopy 50%
• X Ray Diffraction 50%
• Transmittance 50%
• Optical Constants 50%
• Index of Refraction 50%
• Gallium Arsenide 50%
• Substrate Temperature 50%
• Diluted Magnetic Semiconductors 50%
• Band Gap Energy 50%
• Substrate Type 50%
• Spin Electronics 50%
• Energy Dispersive X-ray Spectroscopy 50%
• Alloy Materials 50%
• Corning Glass 50%
• RF Sputtering Method 50%
• Surface Morphology 50%
• Energy Absorption Coefficient 50%
• Property Type 50%
• Layer Thickness 50%
• Spectral Measurement 50%

Engineering

• Thin Films 100%
• Magnetron 100%
• Magnetoelectronics 100%
• Absorptivity 50%
• Ray Diffraction 50%
• Atomic Force Microscopy 50%
• Absorption Coefficient 50%
• Band Gap Energy 50%
• Gallium Arsenide 50%
• Substrate Temperature 50%
• Magnetic Semiconductor 50%
• Layer Thickness 50%
• Energy Absorption 50%
• Refraction Index 50%
• Crystal Structure 50%
• Surface Morphology 50%

Material Science

• Morphology 100%
• Thin Films 100%
• Magnetron Sputtering 100%
• X-Ray Diffraction 50%
• Atomic Force Microscopy 50%
• Gallium Arsenide 50%
• Diluted Magnetic Semiconductor 50%
• Crystal Structure 50%
• Surface Morphology 50%
• Energy-Dispersive X-Ray Spectroscopy 50%