TY - JOUR
T1 - Structural, optical and morphological properties of Ga 1-xMn xAs thin films deposited by magnetron sputtering for spintronic device applications
AU - Bernal, M. E.
AU - Dussan, A.
AU - Mesa, F.
N1 - Funding Information:
This work was supported by COLCIENCIAS, Universidad Nacional de Colombia (Quipu-no. 201010016486 ), Universidad Libre and CINVESTAV-D.F for the preparation of samples.
Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012/8/15
Y1 - 2012/8/15
N2 - In this work, GaMnAs alloy materials were deposited on 7059 Corning glass and GaAs (1 0 0) substrates via RF magnetron sputtering technique. A concentration of Mn about 0.28 was obtained by Energy Dispersive X-ray spectroscopy. The substrate temperature was changed from 440 to 520 °C and layer thicknesses between 172 and 514 nm were obtained. Characterization by atomic force microscopy and X-ray diffraction were performed to determinate surface morphology and crystal structure, respectively. From transmittance spectral measurements we were able to determine optical constants: band gap energy (E g), absorption coefficient (α), and refraction index (n). A correlation between morphological properties and substrate type was also studied. Diluted magnetic semiconductors like GaMnAs are considered among promising materials for the development of new spin-electronic devices.
AB - In this work, GaMnAs alloy materials were deposited on 7059 Corning glass and GaAs (1 0 0) substrates via RF magnetron sputtering technique. A concentration of Mn about 0.28 was obtained by Energy Dispersive X-ray spectroscopy. The substrate temperature was changed from 440 to 520 °C and layer thicknesses between 172 and 514 nm were obtained. Characterization by atomic force microscopy and X-ray diffraction were performed to determinate surface morphology and crystal structure, respectively. From transmittance spectral measurements we were able to determine optical constants: band gap energy (E g), absorption coefficient (α), and refraction index (n). A correlation between morphological properties and substrate type was also studied. Diluted magnetic semiconductors like GaMnAs are considered among promising materials for the development of new spin-electronic devices.
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U2 - 10.1016/j.physb.2011.12.067
DO - 10.1016/j.physb.2011.12.067
M3 - Research Article
AN - SCOPUS:84862235151
SN - 0921-4526
VL - 407
SP - 3210
EP - 3213
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - 16
ER -