Structural, morphological, and optoelectrical characterization of Bi₂S₃ thin films grown by co-evaporation

This work presents the results of synthesis and characterization of polycrystalline n-type Bi₂S₃ thin films. The films were grown through a chemical reaction from co-evaporation of their precursor elements in a soda-lime glass substrate. The effect of the experimental conditions on the optical, morphological structural properties, the growth rate, and the electrical conductivity (σ) was studied through spectral transmittance, X-ray diffraction (XRD), atomic force microscopy (AFM) and σ versus T measurements, respectively. The results showed that the films grow only in the orthorhombic Bi₂S₃ bismuthinite phase. It was also found that the Bi₂S₃ films present an energy band gap (Eg) of about 1.38 eV. In addition to these results, the electrical conductivity of the Bi₂S₃ films was affected by both the transport of free carriers in extended states of the conduction band and for variable range hopping transport mechanisms, each one predominating in a different temperature range.