TY - JOUR
T1 - Optoelectrical, structural and morphological characterization of Cu 2 ZnSnSe 4 compound used in photovoltaic applications
AU - Mesa, F.
AU - Leguizamon, A.
AU - Dussan, A.
AU - Gordillo, G.
N1 - Funding Information:
This work was supported by COLCIENCIAS, Universidad Nacional de Colombia and Universidad del Rosario. We thank the Semiconducting Materials and Solar Energy Group led by Dr. Gerardo Gordillo for laboratory support in sample preparation.
Publisher Copyright:
© 2016 Elsevier B.V.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2016/10/30
Y1 - 2016/10/30
N2 - In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu 2 ZnSnSe 4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied.
AB - In this work, results are reported concerning the effect of the deposition parameters on the structural properties of Cu 2 ZnSnSe 4 (CZTSe) thin films, grown through a chemical reaction of the metallic precursors by co-evaporation in a two-stage process. XRD measurements revealed that the samples deposited by selenization of Cu and Sn grow in the kesterite phase (CZTSe), respectively. Effect of the deposition temperature and mass ratio Cu/ZnSe on the transport properties of CZTSe films were analyzed. It was also found that the electrical conductivity of the thin films is affected by the transport of free carriers in extended states of the conduction band as well as for variable range hopping transport mechanisms, each one predominating in a different temperature range. The molecular and morphological effect on the compound through Raman and AFM measurements was studied.
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U2 - 10.1016/j.apsusc.2016.04.073
DO - 10.1016/j.apsusc.2016.04.073
M3 - Article
AN - SCOPUS:84971264821
SN - 0169-4332
VL - 384
SP - 386
EP - 392
JO - Applied Surface Science
JF - Applied Surface Science
ER -
