Large thermoelectric figure of merit in graphene layered devices at low temperature

Daniel Olaya, Mikel Hurtado-Morales, Daniel Gómez, Octavio Alejandro Castañeda-Uribe, Zhen Yu Juang, Yenny Hernández

Research output: Contribution to journalResearch Articlepeer-review

17 Scopus citations


Nanostructured materials have emerged as an alternative to enhance the figure of merit (ZT) of thermoelectric (TE) devices. Graphene exhibits a high electrical conductivity (in-plane) that is necessary for a high ZT; however, this effect is countered by its impressive thermal conductivity. In this work TE layered devices composed of electrochemically exfoliated graphene (EEG) and a phonon blocking material such as poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), polyaniline (PANI) and gold nanoparticles (AuNPs) at the interface were prepared. The figure of merit, ZT, of each device was measured in the cross-plane direction using the Transient Harman Method (THM) and complemented with AFM-based measurements. The results show remarkable high ZT values (0.81 < ZT < 2.45) that are directly related with the topography, surface potential, capacitance gradient and resistance of the devices at the nanoscale.

Original languageEnglish (US)
Article number011004
Journal2D Materials
Issue number1
StatePublished - Jan 2018
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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