Efecto Hall y estudio de fotovoltaje superficial transiente (SPV) en películas delgadas de Cu3BiS3

Translated title of the contribution: Hall effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films

F. Mesa, A. Dussan, B. A. Paez-Sierra, H. Rodriguez-Hernandez

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Here, we present the electrical properties of the compound Cu3BiS3 deposited by co-evaporation. This new compound may have the properties necessary to be used as an absorbent layer in solar cells. The samples were characterized by Hall effect and transient surface photovoltage (SPV) measurements. Using Hall effect measurements, we found that the concentration of n charge carriers is in the order of 1016 cm-3 irrespective of the Cu/Bi mass ratio. We also found that the mobility of this compound (μ in the order of 4 cm2V-1s-1) varies according to the transport mechanisms that govern it and are dependent on temperature. Based on the SPV, we found a high density of surface defects, which can be passivated by superimposing a buffer layer over the Cu3BiS3 compound.

Translated title of the contributionHall effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films
Original languageSpanish
Pages (from-to)99-105
Number of pages7
JournalUniversitas Scientiarum
Volume19
Issue number2
DOIs
StatePublished - 2014

All Science Journal Classification (ASJC) codes

  • General

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