Electrical and optical properties of thin films with a SnS2 - Bi2S3 alloy grown by sulphurization

A. Dussan, F. Mesa, M. Botero, G. Gordillo

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Abstract

In this work, thin films of SnS2 with increased Bi content were grown by sulphurization of a thin film of Sn:Bi alloy, at temperatures around 300°C. The effect of the Bi concentration on the optical, electrical and structural properties was determined through measurements of spectral transmittance, conductivity and x-ray diffraction XRD respectively. It was found that the optical constants (refractive index n, absorption coefficient α and energy gap Eg) and the electrical conductivity are significantly affected by the Bi concentration. In particular, a variation of the energy gap between 1.44 and 1.63 eV and a change of the conductivity greater than three orders of magnitude were observed when the content of Bi in the Sn:Bi alloy varied between 0 and 100 %. The analysis of the XRD measurements allowed us to find that the SnS: Bi films grow with a mixture of the SnS2 and Bi 2S3 phases, independently of the Bi content.

Original languageEnglish (US)
Article number012018
JournalJournal of Physics: Conference Series
Volume167
DOIs
StatePublished - 2009
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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